✦ LIBER ✦

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

✍ Scribed by Rolland, Chloé; Caroff, Philippe; Coinon, Christophe; Wallart, Xavier; Leturcq, Renaud

Book ID: 120416844
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 913 KB
Volume: 102
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4809576

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Doping of III-Nitride Nanowires Grown by

Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

✍ Stoica, T.; Calarco, R. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 883 KB

Coevaporation phosphorus doping in Si gr

Coevaporation phosphorus doping in Si grown by molecular beam epitaxy

✍ R. A. A. Kubiak; G. Patel; W. Y. Leong; R. Houghton; E. H. C. Parker 📂 Article 📅 1986 🏛 Springer 🌐 English ⚖ 237 KB

InAs wire crystals grown by molecular be

InAs wire crystals grown by molecular beam epitaxy on porous Si

✍ Basmaji, P. ;Lubyshev, D. I. ;Rossi, J. C. 📂 Article 📅 1993 🏛 John Wiley and Sons 🌐 English ⚖ 880 KB

Electrical properties of InAs1−xSbx and

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

✍ Thelander, Claes; Caroff, Philippe; Plissard, Sébastien; Dick, Kimberly A. 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 1003 KB

On the growth of InAs nanowires by molec

On the growth of InAs nanowires by molecular beam epitaxy

✍ Faustino Martelli; Silvia Rubini; Fauzia Jabeen; Laura Felisari; Vincenzo Grillo 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 899 KB

Alloy formation during molecular beam ep

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

✍ Davydok, Anton; Rieger, Torsten; Biermanns, Andreas; Saqib, Muhammad; Grap, Thom 📂 Article 📅 2013 🏛 International Union of Crystallography 🌐 English ⚖ 861 KB