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Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

✍ Scribed by Stoica, T.; Calarco, R.

Book ID: 114571065
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 883 KB
Volume: 17
Category: Article
ISSN: 1077-260X
DOI: 10.1109/jstqe.2010.2092416

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## Abstract We report on the characteristics of our recent room temperature continuous‐wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE). Uncoated ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous‐wave (cw) threshold current of 110 mA, co