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Molecular beam epitaxy-grown Bi4Te3 nanowires

✍ Scribed by Wang, G.; Lok, S. K.; Wong, G. K. L.; Sou, I. K.


Book ID
111683600
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
517 KB
Volume
95
Category
Article
ISSN
0003-6951

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By exploiting the desired properties of different materials, a heterostructure can be tailored to acquire optimal functionality for a specifi c device. Heterojunction formation in semiconductor nanowires (NWs) is crucial for many predicted applications in nanoscale optoelectronics. [1][2][3] Recentl