Au-assisted growth of InAs nanowire by molecular beam epitaxy is highly governed by the surface diffusion kinetics on the surface and the sidewalls of the growing nanowire. In this paper, we discuss the effects of growth temperature, As/In flux ratio, substrate orientation on the growth of InAs nano
On the growth of InAs nanowires by molecular beam epitaxy
β Scribed by Faustino Martelli; Silvia Rubini; Fauzia Jabeen; Laura Felisari; Vincenzo Grillo
- Book ID
- 108166166
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 899 KB
- Volume
- 323
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Surface diffusion kinetics plays a major role in the growth of III-V nanowires by the molecular beam epitaxial (MBE) technique. As/In flux is one of the key factors in determining the diffusion length, which eventually affect the growth rate, morphology and length of the InAs nanowire. To identify a
We report on the particle diameter dependence of the growth rate of the InSb segment of InAs-InSb heterostructured nanowires grown by chemical beam epitaxy. The analysis of the growth rate reveals that the growth is limited by the Gibbs-Thomson effect and the effect of NW lateral dimensions on the n