We studied the end point detection (EPD) for the direct CMP of the STI structure without the reverse moat etch process. In this case, we applied a high selectivity slurry (HSS) that improves the silicon oxide removal rate and maximizes the oxide-to-nitride selectivity. Quite acceptable and reproduci
Role of abrasives in high selectivity STI CMP slurries
β Scribed by R. Manivannan; S. Ramanathan
- Book ID
- 104051969
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 179 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0167-9317
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β¦ Synopsis
In this study chemical mechanical planarization slurries for shallow trench isolation exhibiting high oxide to nitride polish rate selectivity were investigated and it was found that the abrasives play a major role in suppressing the nitride polish rate and enhancing selectivity. When glutamic acid is used as a selectivity enhancing additive, only ceria based slurries exhibit high selectivity while silica based slurries show low selectivity under identical conditions. A mechanism involving active sites on the ceria abrasive and interaction of glutamic acid with the active sites is proposed to explain the role of abrasive in enhancing selectivity.
π SIMILAR VOLUMES
A new high density plasma SiO2 etching process based on CHF3/CH4 mixture is investigated by means of plasma diagnostics and surface analysis. Selectivity as high as 15 with respect to silicon has been obtained. Besides, a slight decrease of the SiO2 etch rate is observed as compared to CHF3. Deposit