✦ LIBER ✦
SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer
✍ Scribed by L. Rolland; M.C. Peignon; Ch. Cardinaud; G. Turban
- Book ID
- 104305484
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 351 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
A new high density plasma SiO2 etching process based on CHF3/CH4 mixture is investigated by means of plasma diagnostics and surface analysis. Selectivity as high as 15 with respect to silicon has been obtained. Besides, a slight decrease of the SiO2 etch rate is observed as compared to CHF3. Deposition of a carbon-rich fluorocarbon layer on the SiO2 is thought to play an important role in the etching mechanism, as generally described for Si.