RF plasma synthesis of amorphous AIN powder and films

✍ Scribed by M. David; S. V. Babu; D. H. Rasmussen

• Publisher: American Institute of Chemical Engineers
• Year: 1990
• Tongue: English
• Weight: 673 KB
• Volume: 36
• Category: Article
• ISSN: 0001-1541
• DOI: 10.1002/aic.690360608

✦ Synopsis

RF Plasma Synthesis of Amorphous AIN Powder and Films

Amorphous powder and thin films of aluminum nitride (AIN) are deposited in a parallel-plate RF plasma reactor starting from trimethylaluminum (TMA) and ammonia. Film deposition is favored at lower pressures and NH,/TMA ratios; particle deposition occurs under higher pressures and NH,/TMA ratios. Electron microscopy, x-ray diffraction, IR spectroscopy, and UV reflectance measurements are used for product characterization. Films of AIN grown at 250°C are transparent, pure, and have high UV reflectivity. AIN powder is amorphous and has a particle size of 10-20 nm and surface area of about 85 m2/g. Amine impurities present in the as-deposited powder are removed by heat treatment at 600°C. The IR spectra of as-deposited powders do not show the characteristic A I -0 bonding peak found in powders deposited by other methods.