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RF annealing of the implantation-induced defects in silicon using hydrogen plasma

✍ Scribed by Kashchieva, S. ;Danesh, P. ;Dyakov, A.

Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
424 KB
Volume
83
Category
Article
ISSN
0031-8965

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Transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used to study the temperature evolution of hydrogen plasma induced defects in silicon. Hydrogen plasma treated n-and p-doped Czochralski silicon samples were annealed at temperatures between 200 and 1000 Β°C for up to 10 h i