✦ LIBER ✦

Reverse short and narrow channel effects in n and p transistors: quantification of the enhanced diffusion and the gate oxide thickness increase

✍ Scribed by Bernard Leroy; Paul Henri Albarede; Patrick Martin

Book ID: 117149549
Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 307 KB
Volume: 245
Category: Article
ISSN: 0022-3093
DOI: 10.1016/s0022-3093(98)00874-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characteristics of the junction-gate fie

Characteristics of the junction-gate field effect transistor with short channel length : T. L. Chiu and H. N. Ghosh. Solid State Electron.14 (1971), p. 1307

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 115 KB

Temperature dependence of enhanced hole

Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms

✍ Yang, Xiaodong; Parthasarathy, Srivatsan; Sun, Yongke; Koehler, Andrew; Nishida, 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 615 KB

The temperature dependence of the electr

The temperature dependence of the electron mobility degradation mechanisms in n-channel metal-oxide-semiconductor field effect transistors with ZrO[sub 2] and Sm[sub 2]O[sub 3] gate dielectrics

✍ Ho, Hsiao-shuo; Chang, Ingram Yin-ku; Lee, Joseph Ya-min 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 580 KB

Noise of hot carriers in the channel of

Noise of hot carriers in the channel of n silicon junction gate field effect transistors: J. P. Nougier, D. Sodini, M. Rolland, D. Gasquet and G. Lecoy. Solid-St. Electron.21, 133 (1978)

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 128 KB