𝔖 Bobbio Scriptorium

✦ LIBER ✦

Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon: J Huang et al, J appl Phys, 63, 1988, 5521–5525

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 149 KB
Volume: 39
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(89)90420-x

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Transient boron diffusion in ion-implant

Transient boron diffusion in ion-implanted crystalline and amorphous silicon: T O Sedgwick et al, J appl Phys, 63, 1988, 1452–1463

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 153 KB

Low-temperature annealing of As-implante

Low-temperature annealing of As-implanted Ge: S V Hattangady et al, J appl Phys, 63, 1988, 68–74

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 153 KB

The formation of a continuous amorphous

The formation of a continuous amorphous layer by room-temperature implantation of boron into silicon: K S Jones et al, J appl Phys, 63, 1988, 1414–1418

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 152 KB

Transient enhanced diffusion of ion-impl

Transient enhanced diffusion of ion-implanted boron in Si during rapid thermal annealing: Masayasu Miyake and Shinji Aoyama, J appl Phys, 63, 1988, 1754–1757

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 149 KB

Influence of boron related defects on ac

Influence of boron related defects on activation of silicon implanted into undoped semi-insulating GaAs: Fumio Orito et al, J appl Phys, 63, 1988, 2691–2693

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 153 KB

7262. Reverse-bias current reduction in

7262. Reverse-bias current reduction in low-temperature-annealed silicon pn junctions by ultraclean ion-implantation technology: T Nitta et al,J Appl Phys, 69, 1990, 7404–7412

📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 303 KB