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Resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB2

✍ Scribed by J.R. Shappirio; J.J. Finnegan; R.A. Lux; D.C. Fox


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
546 KB
Volume
119
Category
Article
ISSN
0040-6090

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Thin films of TiO 2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by dc sputtering. The phase purity of TiO 2 was confirmed by Raman spectroscopy, and secondary ion mass spectroscopy was used to analyze the interfacial and chemical composition of the TiO 2 thin films.