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Resistivity control of unintentionally doped GaN films

โœ Scribed by A. P. Grzegorczyk; L. Macht; P. R. Hageman; M. Rudzinski; P. K. Larsen


Book ID
104557483
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
125 KB
Volume
2
Category
Article
ISSN
1862-6351

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Spectro-microscopy of Si doped GaN films
โœ Th. Schmidt; M. Siebert; A. Pretorius; S. Gangopadhyay; S. Figge; J.I. Flege; L. ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 271 KB

The surface segregation of Si used for doping of GaN films grown by metal-organic vapor phase epitaxy has been detected by spectromicroscopy. Facetted cracks with a threefold symmetry have been observed which extend over several micrometers. From local spectra, an enhanced Si segregation is deduced