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The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates

✍ Scribed by T.W. Kang; C.S. Park; T.W. Kim

Book ID: 111715614
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 111 KB
Volume: 180
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(01)00320-8

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