Spectro-microscopy of Si doped GaN films

✍ Scribed by Th. Schmidt; M. Siebert; A. Pretorius; S. Gangopadhyay; S. Figge; J.I. Flege; L. Gregoratti; A. Barinov; D. Hommel; J. Falta

• Book ID: 103861028
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 271 KB
• Volume: 246
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.12.018

✦ Synopsis

The surface segregation of Si used for doping of GaN films grown by metal-organic vapor phase epitaxy has been detected by spectromicroscopy. Facetted cracks with a threefold symmetry have been observed which extend over several micrometers. From local spectra, an enhanced Si segregation is deduced at the facets as compared to the flat surface. A scheme is presented which allows to extract quantitative information about the local surface concentrations for such facetted surface systems. Following to this scheme, Si coverages as high as approximately 4.5 • 10 14 Si atoms/cm 2 occur at the facets which clearly proves the segregation tendency of Si.