Infrared reflectance studies of GaN epit
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Feng, Z. C.; Hou, Y. T.; Chua, S. J.; Li, M. F.
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Article
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1999
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John Wiley and Sons
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English
โ 107 KB
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Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify