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Infrared Reflectance Investigation of Undoped and Si-Doped GaN Films on Sapphire

โœ Scribed by Z.C. Feng; Y.T. Hou; M.F. Li; S.J. Chua; W. Wang; L. Zhu


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
133 KB
Volume
216
Category
Article
ISSN
0370-1972

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Infrared reflectance studies of GaN epit
โœ Feng, Z. C.; Hou, Y. T.; Chua, S. J.; Li, M. F. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 107 KB ๐Ÿ‘ 2 views

Infrared reflectivity measurements were performed on undoped and Si-doped GaN films grown on sapphire. After analysing the substrate reflectance accurately, a good fit to the measured reflectance has been achieved. By comparison of the measured and calculated spectra, it becomes possible to identify