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Resistive switching characteristics of ZnO based ReRAMs with different annealing temperatures

✍ Scribed by Hongxia Li; Ben Niu; Qinan Mao; Junhua Xi; Weiqing Ke; Zhenguo Ji

Book ID: 116890876
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 627 KB
Volume: 75
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.04.032

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## Abstract We successfully fabricated perovskite oxide‐based resistance random access memory (RRAM) with improved resistance switching characteristics, at a low temperature. A high‐pressure oxygen‐annealed (HPOA) W/Al/Pr~0.7~Ca~0.3~MnO~3~ (PCMO)/Pt device shows good memory characteristics such as