Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

✍ Scribed by Q. Liu; S. Long; W. Wang; Q. Zuo; S. Zhang; J. Chen; M. Liu

• Book ID: 121812354
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 316 KB
• Volume: 30
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2009.2032566