𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

✍ Scribed by C. Dou; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai


Book ID
113800625
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
570 KB
Volume
52
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.