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Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memory

โœ Scribed by Liu, Chih-Yi; Huang, Jyun-Jie; Lai, Chun-Hung

Book ID
120354575
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
906 KB
Volume
529
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES

The resistive switching characteristics
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
โœ Kou-Chen Liu; Wen-Hsien Tzeng; Kow-Ming Chang; Yi-Chun Chan; Chun-Chih Kuo; Chun ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 613 KB

We successfully fabricated the Gd 2 O 3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd 2 O 3 /Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching