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Residual ion damage in GaAs:C prepared by combined ion beam and molecular beam epitaxy

✍ Scribed by Tsutomu Iida; Yunosuke Makita; Joachim Horn; Hans L. Hartnagel; Takayuki Shima; Shinji Kimura; Kazuyuki Shikama; Hirokazu Sanpei; Adarsh Sandhu; Naoto Kobayashi; Shin-ichiro Uekusa

Book ID
114169058
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
377 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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