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Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system

✍ Scribed by Takuo Hada; Hirotaka Miyamoto; Junichi Yanagisawa; Fujio Wakaya; Yoshihiko Yuba; Kenji Gamo

Book ID: 114164480
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 102 KB
Volume: 175-177
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(00)00547-4

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