Multiple-textured gallium nitride prepared by ion beam assisted molecular beam epitaxy

✍ Scribed by Gerlach, Jürgen W. ;Höche, Thomas

• Book ID: 105363412
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 347 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521251

✦ Synopsis

Abstract

A gallium nitride bilayer was deposited on Al~2~O~3~(0001) by low‐energy nitrogen ion beam assisted molecular beam epitaxy using two different ion energies. First, the ion energy was chosen such that a thin film consisting of a mixture of wurtzitic and zincblende polytypes of GaN could be deposited. For the covering second layer, the ion energy was lowered to obtain optimum growth conditions for single‐polytype wurtzitic GaN. The resulting bilayer was investigated by X‐ray diffraction and transmission electron microscopy and found to contain no less than nine differently oriented types of crystallites possessing well‐defined orientation relationships. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)