𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Epitaxial growth of gallium nitride by ion-beam-assisted evaporation

✍ Scribed by Chan-Wook Jeon; Seon-Hyo Kim; Ig-Hyeon Kim

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
607 KB
Volume
270
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

In situ Raman monitoring of the molecula
In situ Raman monitoring of the molecular beam epitaxial growth of gallium nitride
✍ Dietrich R. T. Zahn; Andreas Schneider; Dietrich Drews πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 243 KB πŸ‘ 2 views

Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 Γ„C without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign