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Residual defects in low-dose arsenic-implanted silicon after high-temperature annealing

✍ Scribed by Sagara, Akihiko; Hiraiwa, Miori; Uedono, Akira; Oshima, Nagayasu; Suzuki, Ryoichi; Shibata, Satoshi

No coin nor oath required. For personal study only.

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