✦ LIBER ✦

Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon

✍ Scribed by Kumar, S. N.; Chaussemy, G.; Canut, B.; Laugier, A.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Direct evidence of arsenic clustering in

✍ Wu, N. R.; Sadana, D. K.; Washburn, J. 📂 Article 📅 1984 🏛 American Institute of Physics 🌐 English ⚖ 519 KB

The migration of the defects induced by

✍ R. Marinescu; S. Prisecaru; R. Albu 📂 Article 📅 1992 🏛 Springer 🌐 English ⚖ 298 KB

Residual disorder in silicon after annea

✍ D. Hagmann 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 370 KB

Effects of substrate temperature on the

✍ S.N. Hsu; L.J. Chen; S.S. Lau 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 419 KB