Reliable high-efficiency high-brightness laser diode bars at 940 nm

✍ Scribed by Hanxuan Li; Tom Truchan; Dennis Brown; Ray Pryor; Rajiv Pandey; Frank Reinhardt; Jeff Mott; George Treusch; Steve Macomber

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 212 KB
• Volume: 36
• Category: Article
• ISSN: 0030-3992
• DOI: 10.1016/j.optlastec.2003.09.017

✦ Synopsis

High-quality InGaAs/AlGaAs laser diode bars emitting at 940 nm have been fabricated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Two hundred and ten Watts maximum continuous-wave output power and a maximum power conversion e ciency of 60% at an output power of 72 W have been demonstrated for a single 1-cm-wide laser bar. These bars exhibit a very good beam quality of 5:7 • × 27:2 • (full-width at half-maximum). Reliability test have been carried out for over 2000 h at ∼ 58 W at room temperature. Under these conditions, the extrapolated lifetime is ∼ 100; 000 h, which suggests that AlGaAs-based lasers of proper designs could have similar long-term reliability as their Al-free counterpart.