Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm
β Scribed by A. Klehr; H. Wenzel; M. Braun; F. Bugge; J. Fricke; A. Knauer; G. Erbert
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 235 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0030-3992
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
High-quality InGaAs/AlGaAs laser diode bars emitting at 940 nm have been fabricated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Two hundred and ten Watts maximum continuous-wave output power and a maximum power conversion e ciency of 60% at an output power of 72 W have been d
Highly efficient 1341 nm continuous-wave laser under 880 nm diode laser pumping in Nd:GdVO 4 crystal is reported. Comparative results obtained by the traditional pumping at 808 nm were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power under 880 nm
Lasing in the green from a distributed feedback (DFB) structure, based upon a second order grating fabricated by replica molding in a dye-doped UV curable polymer, has been demonstrated. For a Bragg grating having a periodicity and depth of 360 Β± 2 nm and 78 Β± 5 nm, respectively, a coumarin 540-poly