MBE grown optically pumped semiconductor disk lasers emitting at 940 nm
✍ Scribed by Jari Lyytikäinen; Jussi Rautiainen; Soile Suomalainen; Riku Koskinen; Jonna Paajaste; Antti Härkönen; Mircea Guina; Oleg Okhotnikov
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 594 KB
- Volume
- 147
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Highly efficient 1341 nm continuous-wave laser under 880 nm diode laser pumping in Nd:GdVO 4 crystal is reported. Comparative results obtained by the traditional pumping at 808 nm were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power under 880 nm
We report on the performance around 1970 nm of a thulium-doped TZNG bulk glass laser pumped by a semiconductor disk laser (SDL) emitting at 1211 nm. A pump-limited maximum output power of 60 mW at 1946 nm was obtained with a measured slope efficiency of 22.4%. The tuning range of 115 nm extended fro