Highly efficient 1341 nm continuous-wave laser under 880 nm diode laser pumping in Nd:GdVO 4 crystal is reported. Comparative results obtained by the traditional pumping at 808 nm were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power under 880 nm
Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping
✍ Scribed by Yan-Fei Lü; Jing Xia; Jun-Guang Wang; Xi-He Zhang; Lin Bao; Hui Quan; Xiao-Dong Yin
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 228 KB
- Volume
- 282
- Category
- Article
- ISSN
- 0030-4018
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The quasi-three-level 912 nm continuous-wave laser emission under direct diode laser pumping at 880 nm into emitting level 4 F 3/2 of Nd:GdVO 4 have been demonstrated. An endpumped Nd:GdVO 4 crystal yielded 8.1 W of output power for 13.9 W of absorbed pump power. The slope efficiency with respect to
We have demonstrated a diode-pumped intra-cavity frequency doubling Nd:LuVO 4 laser operating at 916 nm with a Z-folded cavity. A 10-mm long LBO crystal, cut for critical type I phase matching at 912 nm, is used for the experiment. A maximum output power of 330 mW at 458 nm has been achieved at pump