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Reliability of in-situ rapid thermal gate dielectrics in deep submicrometer MOSFET's

โœ Scribed by Zhang, K.X.; Osburn, C.M.


Book ID
114536383
Publisher
IEEE
Year
1995
Tongue
English
Weight
845 KB
Volume
42
Category
Article
ISSN
0018-9383

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Impact of high-temperature rapid thermal
โœ Akihiro Shimizu; Nagatoshi Ohki; Hiroshi Ishida; Toshiaki Yamanaka; Ken-Ichi Kik ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 687 KB

We investigated the impact of high-temperature rapid thermal annealing (HT-RTA) for CMOSFET design in the deep-submicrometer regime. HT-RTA (>lo00 "C) carried out immediately after ion implantation can reduce the transient enhanced diffusion of implanted impurities and suppress interactions between