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Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides

โœ Scribed by You-Lin Wu; Zhao-Yin Wu; Jenn-Gwo Hwu


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
464 KB
Volume
38
Category
Article
ISSN
0038-1101

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