Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides : YOU-LIN WU, ZHAO-YIN WU and JENN-GWO HWU. Solid-State Electronics, 38(4), 839 (1995)

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 112 KB
• Volume: 36
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(96)84494-5