✦ LIBER ✦

Reliability in fluorinated CMOS devices

✍ Scribed by Guo Qiang Zhang; Rong Liang Yan; Di Yuan Ren; Xue Feng Yu; Wu Lu

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 387 KB
Volume: 28
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(96)00097-3

No coin nor oath required. For personal study only.

✦ Synopsis

Improved ionizing radiation hardness in fluorinated CD4007 inverters has been obtained. The slight increase of threshold voltage and the evident degradation of quiescent supply current in CD4007 happened afier high temperature storage. The quiescent supply current degradation induced by high temperature can be restrained by introducing minute amounts of fluorine into gate oxides.

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