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Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

✍ Scribed by O.O. Awadelkarim; S.J. Fonash; P.I. Mikulan; M. Ozaita; Y.D. Chan


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
394 KB
Volume
28
Category
Article
ISSN
0167-9317

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