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Regularities in the formation of dislocation networks on the boundary of bonded Si(001) wafers

✍ Scribed by V. I. Vdovin, E. V. Ubyivovk, O. F. Vyvenko


Book ID
120808699
Publisher
Springer
Year
2013
Tongue
English
Weight
544 KB
Volume
47
Category
Article
ISSN
1063-7826

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On the nature of dislocation loops in As
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system. We observed a typical dissociation efficiency of 0.63 from the hydrogen discharge and of 0.73 from a mixture of hydrogen and argon. After coating with concentrated ortho-phosphoric acid. a hydrogen dissociation efficiency as high as 0.82 could be observed. The fraction of dissociated oxygen