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Reflectance Anisotropy Spectroscopy of Si(111)-(4 � 1)-In

✍ Scribed by Fleischer, K. ;Chandola, S. ;Esser, N. ;Richter, W. ;McGilp, J.F.


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
106 KB
Volume
188
Category
Article
ISSN
0031-8965

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We demonstrate the use of Reflectance Anisotropy Spectroscopy (RAS) to determine the carrier concentration in GaAs of the topmost layers (%20 nm) in-situ during layer growth. The doping contributes to three features in the RAS spectra: an oscillation at 0 and an offset of the baseline of the whole