✦ LIBER ✦

Reflectance anisotropy oscillations of the heteroepitaxial growth of AlAs and Al1 − xGaxAs on GaAs(001) surfaces by molecular beam epitaxy

✍ Scribed by A.G. Taylor; A.R. Turner; B.A. Joyce; M.E. Pemble

Book ID: 117217012
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 528 KB
Volume: 375
Category: Article
ISSN: 0039-6028
DOI: 10.1016/s0039-6028(96)01294-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Surface processes responsible for reflec

Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)

✍ J. Rumberg; J.-T. Zettler; K. Stahrenberg; K. Ploska; W. Richter; L. Däweritz; P 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 503 KB

Optical reflectance and electron diffrac

Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)

✍ Aspnes, D. E.; Harbison, J. P.; Studna, A. A.; Florez, L. T. 📂 Article 📅 1987 🏛 The American Physical Society 🌐 English ⚖ 211 KB

Surface diffusion processes in molecular

Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)B facet structures

✍ Koshiba, S.; Nakamura, Y.; Tsuchiya, M.; Noge, H.; Kano, H.; Nagamune, Y.; Noda, 📂 Article 📅 1994 🏛 American Institute of Physics 🌐 English ⚖ 988 KB

Metalorganic molecular beam epitaxy of G

Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy

✍ T. B. Joyce; P. R. Chalker; T. Farrell 📂 Article 📅 1999 🏛 Springer US 🌐 English ⚖ 105 KB

In-situ monitoring of Si and SiGe growth

In-situ monitoring of Si and SiGe growth on Si(001) surfaces during gas-source molecular beam epitaxy using reflectance anisotropy

✍ J. Zhang; A.K. Lees; A.G. Taylor; D. Raisbeck; N. Shukla; J.M. Fernández; B.A. J 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 515 KB

Reflectance anisotropy and reflection hi

Reflectance anisotropy and reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si and SiGe on Si(001)

✍ J. Zhang; A.G. Taylor; J.M. Fernández; B.A. Joyce; A.R. Turner; M.E. Pemble 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 433 KB