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Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)B facet structures

โœ Scribed by Koshiba, S.; Nakamura, Y.; Tsuchiya, M.; Noge, H.; Kano, H.; Nagamune, Y.; Noda, T.; Sakaki, H.


Book ID
121495153
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
988 KB
Volume
76
Category
Article
ISSN
0021-8979

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The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0