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Reflectance and photoreflectance for in-situ monitoring of the molecular beam epitaxial growth of CdTe and Hg-based materials

✍ Scribed by Zhonghai Yu; M. A. Mattson; T. H. Myers; K. A. Harris; R. W. Yanka; L. M. Mohnkern; L. C. Lew Yan Voon; L. R. Ram-Mohan; R. G. Benz; B. K. Wagner; C. J. SummersBenz


Book ID
112816310
Publisher
Springer US
Year
1995
Tongue
English
Weight
622 KB
Volume
24
Category
Article
ISSN
0361-5235

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In situ Raman monitoring of the molecula
✍ Dietrich R. T. Zahn; Andreas Schneider; Dietrich Drews πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 243 KB πŸ‘ 2 views

Raman spectroscopy was applied to monitor the growth of GaN at temperatures around 600 Γ„C without interrupting the growth process. GaN was deposited on GaAs(100) and Si(111) substrates by molecular beam epitaxy using elemental Ga and atomic nitrogen provided by an r.f. plasma source. Sufficient sign