𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Refined electrical analysis of two charge states transition characteristic of “borderless” silicon nitride

✍ Scribed by G. Beylier; S. Bruyère; D. Benoit; G. Ghibaudo


Book ID
104057950
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
338 KB
Volume
47
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Evaluation of trap states at front and b
✍ Mutsumi Kimura 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 756 KB

## Abstract The trap states at the front and back oxide interfaces and grain boundaries of polycrystalline silicon thin‐film transistors are evaluated by using electrical characteristic analysis and device simulation. First, the method for extracting the trap densities of the front and back oxide i