Evaluation of deep states in amorphous-silicon/silicon-nitride system from charge-coupled device characteristics : S SEKINE, S NAKAMURA, S ODA, M MATSUMURA (Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan) Jpn. J. Appl. Phys. 2, Lett. (Japan), vol. 27, no. 7, pp. 1337–1339 (July 1988)

• Book ID: 103269807
• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 96 KB
• Volume: 20
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/0026-2692(89)90103-1