## Abstract A new multistep MOCVD method for growing GaN is used to suppress threading dislocations in GaN epilayers on __c__ βplane sapphire. A nucleation island density of as low as 2.5 Γ 10^7^ cm^β2^ is reported. Developed subsequent overgrowth prevents the formation of new islands and stimulate
Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
β Scribed by Hartono, H.; Soh, C. B.; Chow, S. Y.; Chua, S. J.; Fitzgerald, E. A.
- Book ID
- 127216750
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 395 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0003-6951
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## Abstract A theoretical approach is proposed to reduce the density of threading dislocations (TDs) in (0001) oriented growth of GaN layers. The approach can be realized by repeated stages of growth surface roughening (stage I) and flattening (stage II). Fundamentals of the approach include the fo
## Abstract GaN overlayers for the purpose of reducing extended defects have been grown by MOCVD on porous network of TiN thin layers which in turn were achieved by __in situ__ nitridation of thin Ti layers (20 nm and 10 nm) on a GaN template. TEM analyses performed for the GaN layer with 20 nm TiN