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Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

✍ Scribed by Cho, H. K.; Lee, J. Y.; Yang, G. M.; Kim, C. S.

Book ID: 126894634
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 608 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1384906

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