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Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates

✍ Scribed by Zhao, Z. D.; Wang, B.; Sui, Y. P.; Xu, W.; Li, X. L.; Yu, G. H.

Book ID: 121422067
Publisher: Springer US
Year: 2013
Tongue: English
Weight: 358 KB
Volume: 43
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-013-2920-5

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