๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Reduction of resistivity in Cu thin films by partial oxidation: Microstructural mechanisms

โœ Scribed by Prater, Walter L.; Allen, Emily L.; Lee, Wen-Y.; Toney, Michael F.; Daniels, Jonathan; Hedstrom, Jonathan A.


Book ID
120592262
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
392 KB
Volume
84
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Mechanism of nonvolatile resistive switc
โœ Fei Zhuge; Benlin Hu; Congli He; Xufeng Zhou; Zhaoping Liu; Run-Wei Li ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 486 KB

The mechanism of the resistive switching (RS) effect in graphene oxide (GO) thin films prepared by the vacuum filtration method has been investigated by macroscopic currentvoltage (I-V) measurements and conducting atomic force microscopy (CAFM). Detailed I-V measurements show that in metal/GO/Pt san