𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Reduction of lateral ion straggling for the fabrication of intermixed GaAs/AlGaAs quantum wires

✍ Scribed by F.E. Prins; G. Lehr; M. Burkard; H. Schweizer; G.W. Smith


Book ID
113283501
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
297 KB
Volume
80-81
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Fabrication of three-dimensional GaAs–Al
✍ Y.J. Kim; Y.J. Seo; E.H. Kim; D.H. Kim; C.H. Roh; H. Kim; C.K. Hahn; Y.M. Sung; πŸ“‚ Article πŸ“… 2007 πŸ› Elsevier Science 🌐 English βš– 510 KB

Three-dimensional (3D) GaAs-AlGaAS heterostructures were grown by selective-area molecular beam epitaxy on a patterned GaAs(0 0 1) substrate to improve the efficiency of carrier transport from the source to the drain through 1D channels in quantum-wire (QWR) field-effect transistors. Prior to the QW

A study for the cartography of the inter
✍ Maria Tsetseri; Georgios P Triberis; Valia Voliotis; Roger Grousson πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 142 KB

We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the photoluminescence and microphotoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuat