Reduction of lateral ion straggling for the fabrication of intermixed GaAs/AlGaAs quantum wires
β Scribed by F.E. Prins; G. Lehr; M. Burkard; H. Schweizer; G.W. Smith
- Book ID
- 113283501
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 297 KB
- Volume
- 80-81
- Category
- Article
- ISSN
- 0168-583X
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π SIMILAR VOLUMES
Three-dimensional (3D) GaAs-AlGaAS heterostructures were grown by selective-area molecular beam epitaxy on a patterned GaAs(0 0 1) substrate to improve the efficiency of carrier transport from the source to the drain through 1D channels in quantum-wire (QWR) field-effect transistors. Prior to the QW
We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the photoluminescence and microphotoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuat