Fabrication of three-dimensional GaAs–AlGaAS heterostructures for improving carrier injection efficiency in quantum-wire FETs
✍ Scribed by Y.J. Kim; Y.J. Seo; E.H. Kim; D.H. Kim; C.H. Roh; H. Kim; C.K. Hahn; Y.M. Sung; M. Ogura; T.G. Kim
- Book ID
- 104084785
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 510 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
Three-dimensional (3D) GaAs-AlGaAS heterostructures were grown by selective-area molecular beam epitaxy on a patterned GaAs(0 0 1) substrate to improve the efficiency of carrier transport from the source to the drain through 1D channels in quantum-wire (QWR) field-effect transistors. Prior to the QWR growth, GaAs ridge structures with 2 mm line-and-space patterns, were prepared as the starting materials. The surface of the ridge was chemically treated with an NH 3 solution to improve the surface roughness and thereby to minimize the defect density at the GaAs/AlGaAs interface. Then, GaAs/AlGaAs QWRs were grown on top of the ridge structures with optimum growth conditions. A scanning electron microscope and position-resolved m-PL measurements along the QWR direction showed that 3D GaAs-AlGaAS heterostructures, where 1D QWRs were adiabatically coupled with a 2D electron gas, were successfully fabricated.