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A study for the cartography of the interface roughness of V-shaped AlGaAs/GaAs quantum wires

โœ Scribed by Maria Tsetseri; Georgios P Triberis; Valia Voliotis; Roger Grousson

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
142 KB
Volume
29
Category
Article
ISSN
0749-6036

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โœฆ Synopsis

We present a theoretical study for the cartography of the interface roughness of AlGaAs/ GaAs V-shaped quantum wires which is reflected on the photoluminescence and microphotoluminescence spectra of these structures. The model developed is based on the existence of microscopic compositional fluctuations at the interfaces. The fine structure of the micro-photoluminescence spectrum is attributed to localized excitonic states in islandlike fluctuations which act as quantum boxes distributed along the free direction of the wire. The fluctuation of the concentration of these boxes together with the estimation of their sizes are used to explain the evolution of the signals along the wire axis and to produce the overall photoluminescence spectrum. The model is applied to a V-shaped Al 0.3 Ga 0.7 As/GaAs quantum wire and reproduces successfully the observed photoluminescence and micro-photoluminescence characteristics.

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