Modelling of the electronic structure for an AlGaAs/GaAs/AlGaAs HFET with a δ-doping layer inside the quantum well

✍ Scribed by S. Trott; V. Nakov; G. Gobsch; R. Goldhahn

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 486 KB
• Volume: 36
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(93)90007-d