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Reduction of carrier concentrations of - films by atomic hydrogen-assisted molecular beam epitaxy

โœ Scribed by K. Akutsu; M. Suzuno; H. Kawakami; T. Suemasu

Publisher
Elsevier
Year
2011
Tongue
English
Weight
259 KB
Volume
11
Category
Article
ISSN
1875-3892

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Growth controllabilities of morphology and wire width are systematically investigated for the InGaAs ridge quantum wires (QWRs) grown by the atomic hydrogen (H \* )-assisted selective molecular beam epitaxy (MBE) growth. Detailed scanning electron microscopy (SEM), photoluminescence (PL) and magneto